Benefits of XPS nanocharacterization for process development and industrial control of thin SiGe channel layers in advanced CMOS technologies

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Authors: L. Fauquier, B. Pelissier, D. Jalabert, F. Pierre, J.M. Hartmann, F. Rozé, D. Doloy, D. Le Cunff, C. Beitia, T. Baron

Journal title: Materials Science in Semiconductor Processing

Journal number: 70

Journal publisher: Pergamon Press

Published year: 2017

Published pages: 105-110

DOI identifier: 10.1016/j.mssp.2016.10.028

ISSN: 1369-8001