A novel dual isolation scheme for stress and back-bias maximum efficiency in FDSOI Technology

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Authors: R. Berthelon, F. Andrieu, P. Perreau, D. Cooper, F. Roze, O. Gourhant, P. Rivallin, N. Bernier, A. Cros, C. Ndiaye, E. Baylac, E. Souchier, D. Dutartre, A. Claverie, O. Weber, E. Josse, M. Vinet, M. Haond

Journal title: 2016 IEEE International Electron Devices Meeting (IEDM)

Journal publisher: IEEE

Published year: 2016

Published pages: 17.7.1-17.7.4

DOI identifier: 10.1109/IEDM.2016.7838442

ISBN: 978-1-5090-3902-9