Characterization and modelling of layout effects in SiGe channel pMOSFETs from 14nm UTBB FDSOI technology

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Authors: R. Berthelon, F. Andrieu, S. Ortolland, R. Nicolas, T. Poiroux, E. Baylac, D. Dutartre, E. Josse, A. Claverie, M. Haond

Journal title: Solid-State Electronics

Journal number: 128

Journal publisher: Pergamon Press Ltd.

Published year: 2017

Published pages: 72-79

DOI identifier: 10.1016/j.sse.2016.10.011

ISSN: 0038-1101