Investigation of hot carrier reliability of SOI and strained SOI transistors using back bias

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Authors: G. Besnard, X. Garros, A. Subirats, F. Andrieu, X. Federspiel, M. Rafik, W. Schwarzenbach, G. Reimbold, O. Faynot, S. Cristoloveanu, C. Mazure

Journal title: 2015 International Symposium on VLSI Technology, Systems and Applications

Journal publisher: IEEE

Published year: 2015

Published pages: 1-2

DOI identifier: 10.1109/VLSI-TSA.2015.7117577

ISBN: 978-1-4799-7375-0