Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level

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Authors: I. Rossetto, M. Meneghini, E. Canato, M. Barbato, S. Stoffels, N. Posthuma, S. Decoutere, A.N. Tallarico, G. Meneghesso, E. Zanoni

Journal title: Microelectronics Reliability

Journal number: 76-77

Journal publisher: Elsevier BV

Published year: 2017

Published pages: 298-303

DOI identifier: 10.1016/j.microrel.2017.06.061

ISSN: 0026-2714