Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates

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Authors: S. You, N. E. Posthuma, N. Ronchi, S. Stoffels, B. Bakeroot, D. Wellekens, H. Liang, M. Zhao and S. Decoutere

Journal title: Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe 2018

Journal publisher: IMT Bucharest

Published year: 2018