Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications

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Authors: N.E. Posthuma, S. You, S. Stoffels, H. Liang, M. Zhao and S. Decoutere

Journal title: The 30th IEEE International Symposium on Power Semiconductor Devices and Ics (ISPSD)

Journal publisher: IEEE

Published year: 2018