Dislocation formation in heavily As-doped Czochralski grown silicon

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Authors: L. Stockmeier, L. Lehmann, A. Miller, C. Reimann, J. Friedrich

Journal title: Crystal Research and Technology

Journal number: 52/8

Journal publisher: Wiley - V C H Verlag GmbbH & Co.

Published year: 2017

Published pages: 1600373

DOI identifier: 10.1002/crat.201600373

ISSN: 0232-1300