Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method

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Authors: L. Stockmeier, C. Kranert, G. Raming, A. Miller, C. Reimann, P. Rudolph, J. Friedrich

Journal title: Journal of Crystal Growth

Journal number: 491

Journal publisher: Elsevier BV

Published year: 2018

Published pages: 57-65

DOI identifier: 10.1016/j.jcrysgro.2018.03.028

ISSN: 0022-0248