Comparative analysis of GaN HEMT vs. Si CoolMOS for a high-frequency MMC topology

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Authors: Ander Avila, Asier Garcia-Bediaga, Oier Onederra, Alejandro Ruias, Alberto Rodriguez

Journal title: 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

Journal publisher: IEEE

Published year: 2017

Published pages: P.1-P.9

DOI identifier: 10.23919/EPE17ECCEEurope.2017.8099334

ISBN: 978-90-75815-27-6