Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs

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Authors: Gaudenzio Meneghesso, Davide Bisi, Isabella Rossetto, Maria Ruzzarin, Matteo Meneghini, Enrico Zanoni

Journal title: 2016 IEEE International Integrated Reliability Workshop (IIRW)

Journal publisher: IEEE

Published year: 2016

Published pages: 35-40

DOI identifier: 10.1109/IIRW.2016.7904896

ISBN: 978-1-5090-4193-0