200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration

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Authors: X. Li; M. Van Hove; M. Zhao; K. Geens; V. P. Lempinen; J. Sormunen; G. Groeseneken; S. Decoutere

Journal title: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe

Journal publisher: IUMA, Spain

Published year: 2017