200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration

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Authors: Xiangdong Li, Marleen Van Hove, Ming Zhao, Karen Geens, Vesa-Pekka Lempinen, Jaakko Sormunen, Guido Groeseneken, Stefaan Decoutere

Journal title: IEEE Electron Device Letters

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2017

Published pages: 1-1

DOI identifier: 10.1109/LED.2017.2703304

ISSN: 0741-3106