Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

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Authors: S. Stoffels, B. Bakeroot, T. L. Wu, D. Marcon, N. E. Posthuma, S. Decoutere, A. N. Tallarico, C. Fiegna

Journal title: 2017 IEEE International Reliability Physics Symposium (IRPS)

Journal publisher: IEEE

Published year: 2017

Published pages: 4B-4.1-4B-4.9

DOI identifier: 10.1109/IRPS.2017.7936310

ISBN: 978-1-5090-6641-4