Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

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Authors: Matteo Meneghini, Isabella Rossetto, Matteo Borga, Eleonora Canato, Carlo De Santi, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Stefaan Decoutere

Journal title: 2017 IEEE International Reliability Physics Symposium (IRPS)

Journal publisher: IEEE

Published year: 2017

Published pages: 4B-5.1-4B-5.5

DOI identifier: 10.1109/IRPS.2017.7936311

ISBN: 978-1-5090-6641-4