3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation

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Authors: Yaxin Zhang, Wenfeng Liang, Xiaodi Jin, Mario Krattenmacher, Sophia Falk, Paulius Sakalas, Bernd Heinemann, Michael Schroter

Journal title: IEEE Journal of Solid-State Circuits

Journal number: 55/6

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2020

Published pages: 1-11

DOI identifier: 10.1109/jssc.2019.2959510

ISSN: 0018-9200