A unified aging compact model for hot carrier degradation under mixed-mode and reverse E-B stress in complementary SiGe HBTs

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Authors: C. Mukherjee, G.G. Fischer, F. Marc, M. Couret, T. Zimmer, C. Maneux

Journal title: Solid-State Electronics

Journal number: 172

Journal publisher: Pergamon Press Ltd.

Published year: 2020

Published pages: 107900

DOI identifier: 10.1016/j.sse.2020.107900

ISSN: 0038-1101