D-Band SiGe BiCMOS Power Amplifier With 16.8dBm P₁dB and 17.1% PAE Enhanced by Current-Clamping in Multiple Common-Base Stages

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Authors: Ibrahim Petricli, Domenico Riccardi, Andrea Mazzanti

Journal title: IEEE Microwave and Wireless Components Letters

Journal number: 31/3

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2021

Published pages: 288-291

DOI identifier: 10.1109/lmwc.2021.3049458

ISSN: 1531-1309