A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Joao Carlos Azevedo Goncalves, Thomas Quemerais, Daniel Gloria, Gregory Avenier, Sylvie Lepilliet, Guillaume Ducournau, Christophe Gaquiere, Francois Danneville

Journal title: 2017 International Conference of Microelectronic Test Structures (ICMTS)

Journal publisher: IEEE

Published year: 2017

Published pages: 1-3

DOI identifier: 10.1109/ICMTS.2017.7954271

ISBN: 978-1-5090-3615-8