A G band +2 dBm balanced frequency doubler in 55 nm SiGe BiCMOS

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Authors: W. Aouimeur, J. Moron-Guerra, A. Serhan, S. Lepilliet, T. Quemerais, D. Gloria, E. Lauga-Larroze, J.-D. Arnould, C. Gaquiere

Journal title: 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

Journal publisher: IEEE

Published year: 2017

Published pages: 60-63

DOI identifier: 10.1109/SIRF.2017.7874371

ISBN: 978-1-5090-5237-0