Characterization, modeling and comparison of 1/f noise in Si/SiGe:C HBTs issued from three advanced BiCMOS technologies

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Authors: M. Seif, F. Pascal, B. Sagnes, J. Elbeyrouthy, A. Hoffmann, S. Haendler, P. Chevalier, D. Gloria

Journal title: 2017 29th International Conference on Microelectronics (ICM)

Journal publisher: IEEE

Published year: 2017

Published pages: 1-4

DOI identifier: 10.1109/ICM.2017.8268847

ISBN: 978-1-5386-4049-4