Impact of nickel silicide on SiGe BiCMOS devices

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Authors: Dirk Wolansky, Thomas Grabolla, Thomas Lenke, Sebastian Schulze, Peter Zaumseil

Journal title: Semiconductor Science and Technology

Journal number: 33/12

Journal publisher: Institute of Physics Publishing

Published year: 2018

Published pages: 124003

DOI identifier: 10.1088/1361-6641/aae612

ISSN: 0268-1242