Integration of SiGe HBT with <tex>$\text{f}_{\text{T}}=305\ \text{GHz},\ \text{f}_{\max}=537 \text{GHz}$</tex> in 130nm and 90nm CMOS

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Authors: D. Manger, W. Liebl, S. Boguth, B. Binder, K. Aufinger, C. Dahl, C. Hengst, A. Pribil, J. Oestreich, S. Rohmfeld, S. Rothenhaeusser, D. Tschumakow, J. Boeck

Journal title: 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

Journal publisher: IEEE

Published year: 2018

Published pages: 76-79

DOI identifier: 10.1109/bcicts.2018.8550922

ISBN: 978-1-5386-6502-2