450 GHz <tex>$f_{\text{T}}$</tex> SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node

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Authors: A. Gauthier, J. Borrel, P. Chevalier, G. Avenier, A. Montagne, M. Juhel, R. Duru, L. -R. Clement, C. Borowiak, M. Buczko, C. Gaquiere

Journal title: 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

Journal publisher: IEEE

Published year: 2018

Published pages: 72-75

DOI identifier: 10.1109/bcicts.2018.8551057

ISBN: 978-1-5386-6502-2