Effects of Total Ionizing Dose on I-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors

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Authors: J. Elbeyrouthy, A. Vauthelin, M. Seif, B. Sagnes, F. Pascal, A.Hoffmann, M. Valenza, J. Boch, T. Maraine, S. Haendler, A. Gauthier, P. Chevalier, and D. Gloria

Journal title: 30th European Conference on Radiation and its Effects on Components and Systems - RADECS 2019

Journal publisher: 30th European Conference on Radiation and its Effects on Components and Systems - RADECS 2019

Published year: 2019