A physical and versatile aging compact model for hot carrier degradation in SiGe HBTs under dynamic operating conditions

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Authors: C. Mukherjee, F. Marc, M. Couret, G.G. Fischer, M. Jaoul, D. Céli, K. Aufinger, T. Zimmer, C. Maneux

Journal title: Solid-State Electronics

Journal number: 163

Journal publisher: Pergamon Press Ltd.

Published year: 2020

Published pages: 107635

DOI identifier: 10.1016/j.sse.2019.107635

ISSN: 0038-1101