Mixed-Mode Stress in Silicon–Germanium Heterostructure Bipolar Transistors: Insights From Experiments and Simulations

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Authors: Francesco Maria Puglisi, Luca Larcher, Paolo Pavan

Journal title: IEEE Transactions on Device and Materials Reliability

Journal number: 19/2

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2019

Published pages: 275-282

DOI identifier: 10.1109/tdmr.2019.2912853

ISSN: 1530-4388