A 30.1 mW / $\mu$ m 2 SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node

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Authors: A. Gauthier, W. Aouimeur, E. Okada, N. Guitard, P. Chevalier, C. Gaquiere

Journal title: IEEE Electron Device Letters

Journal number: 41/1

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2020

Published pages: 12-14

DOI identifier: 10.1109/led.2019.2954600

ISSN: 0741-3106