Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs

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Authors: Nicolo Zagni, Francesco Maria Puglisi, Giovanni Verzellesi, Paolo Pavan

Journal title: IEEE Transactions on Electron Devices

Journal number: 67/11

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2020

Published pages: 4597-4601

DOI identifier: 10.1109/ted.2020.3018103

ISSN: 0018-9383