SiO₂/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements

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Authors: Patrick Fiorenza, Filippo Giannazzo, Mario Giuseppe Saggio, Fabrizio Roccaforte

Journal title: Materials Science Forum

Journal number: 963

Journal publisher: Proc. of European Conference of Silicon Carbide and Related Materials

Published year: 2019

Published pages: 230-235

DOI identifier: 10.4028/www.scientific.net/msf.963.230

ISSN: 1662-9752