Capability of SiC MOSFETs under Short-Circuit Tests and Development of a Thermal Model by Finite Element Analysis

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Authors: Daniela Cavallaro, Mario Pulvirenti, Edoardo Zanetti, Mario Giuseppe Saggio

Journal title: Materials Science Forum

Journal number: 963

Journal publisher: Trans Tech Pub

Published year: 2019

Published pages: 788-791

DOI identifier: 10.4028/www.scientific.net/msf.963.788

ISSN: 1662-9752