Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2 /4H-SiC MOS capacitors

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Authors: Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Journal title: Materials Science in Semiconductor Processing

Journal number: 78

Journal publisher: Pergamon Press

Published year: 2018

Published pages: 38-42

DOI identifier: 10.1016/j.mssp.2017.11.024

ISSN: 1369-8001