Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO₂/4H-SiC MOSFETs

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Authors: Patrick Fiorenza, Ferdinando Iucolano, Mario Saggio, Fabrizio Roccaforte

Journal title: Materials Science Forum

Journal number: 924

Journal publisher: Scientific.Net

Published year: 2018

Published pages: 285-288

DOI identifier: 10.4028/www.scientific.net/MSF.924.285

ISSN: 1662-9752