Processing Issues in SiC and GaN Power Devices Technology: The Cases of 4H-SiC Planar MOSFET and Recessed Hybrid GaN MISHEMT

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Authors: F. Roccaforte, G. Greco, P. Fiorenza

Journal title: 2018 International Semiconductor Conference (CAS)

Journal publisher: IEEE

Published year: 2018

Published pages: 7-16

DOI identifier: 10.1109/smicnd.2018.8539756

ISBN: 978-1-5386-4482-9