Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

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Authors: P. Fiorenza, M. Vivona, S. Di Franco, E. Smecca, S. Sanzaro, A. Alberti, M. Saggio, F. Roccaforte

Journal title: Materials Science in Semiconductor Processing

Journal number: 93

Journal publisher: Pergamon Press

Published year: 2019

Published pages: 290-294

DOI identifier: 10.1016/j.mssp.2019.01.017

ISSN: 1369-8001