Nanolaminated Al 2 O 3 /HfO 2 dielectrics for silicon carbide based devices

Summary

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Authors: Raffaella Lo Nigro, Emanuela SchilirĂ², Patrick Fiorenza, Fabrizio Roccaforte

Journal title: Journal of Vacuum Science & Technology A

Journal number: 38/3

Journal publisher: American Institute of Physics

Published year: 2020

Published pages: 032410

DOI identifier: 10.1116/1.5134662

ISSN: 0734-2101