Reliability analysis in GeTe and GeSbTe based phase-change memory 4 kb arrays targeting storage class memory applications

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Authors: G. Lama, G. Bourgeois, M. Bernard, N. Castellani, J. Sandrini, E. Nolot, J. Garrione, M.C. Cyrille, G. Navarro, E. Nowak

Journal title: Microelectronics Reliability

Journal number: 114

Journal publisher: Elsevier BV

Published year: 2020

Published pages: 113823

DOI identifier: 10.1016/j.microrel.2020.113823

ISSN: 0026-2714