Switching Voltage and Time Statistics of Filamentary Conductive Paths in HfO 2 -Based ReRAM Devices

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: A. Rodriguez-Fernandez, C. Cagli, J. Sune, E. Miranda

Journal title: IEEE Electron Device Letters

Journal number: 39/5

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2018

Published pages: 656-659

DOI identifier: 10.1109/led.2018.2822047

ISSN: 0741-3106