Ferroelectric HfO 2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance

Summary

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: T. Francois, J. Coignus, L. Grenouillet, J.P. Barnes, N. Vaxelaire, J. Ferrand, I. Bottala-Gambetta, M. Gros-Jean, S. Jeannot, P. Boivin, P. Chiquet, M. Bocquet, E. Nowak, F. Gaillard

Journal title: 2019 IEEE 11th International Memory Workshop (IMW)

Journal publisher: IEEE

Published year: 2019

Published pages: 1-4

DOI identifier: 10.1109/imw.2019.8739664

ISBN: 978-1-7281-0981-7