Impact of roughness of TiN bottom electrode on the forming voltage of HfO2 based resistive memories

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Authors: C. Charpin-Nicolle, M. Bonvalot, R. Sommer, A. Persico, M.L. Cordeau, S. Belahcen, B. Eychenne, Ph. Blaise, S. Martinie, S. Bernasconi, E. Jalaguier, E. Nowak

Journal title: Microelectronic Engineering

Journal publisher: Elsevier BV

Published year: 2019

Published pages: 111194

DOI identifier: 10.1016/j.mee.2019.111194

ISSN: 0167-9317