Embedded Select in Trench Memory (eSTM), best in class 40nm floating gate based cell: a process integration challenge

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Authors: S. Niel, F. La Rosa, A. Regnier, M. Mantelli, F. Trenteseaux, G. Ghezzi, A. Marzaki, Q. Hubert, J. Delalleau, T. Cabout, F. Maugain, E. Lepape, L. Baron, A. Champenois, D. Galpin, N. Cherault, S. Audran, L. Parmigiani, P. Gouraud, B. Duclaux, Y. Escarabajal, F. Baudin, E. Beche, B. Saidi, V. Arnal

Journal title: 2018 IEEE International Electron Devices Meeting (IEDM)

Journal number: 2018 IEEE International Electron Devices Meeting

Journal publisher: IEEE

Published year: 2018

Published pages: 7.4.1-7.4.4

DOI identifier: 10.1109/iedm.2018.8614517

ISBN: 978-1-7281-1987-8