Multilevel Programming Reliability in Si-doped GeSbTe for Storage Class Memory

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Authors: G. Lama, M. Bernard, N. Bernier, G. Bourgeois, E. Nolot, N. Castellani, J. Garrione, M. C. Cyrille, G. Navarro, E. Nowak

Journal title: 2021 IEEE International Reliability Physics Symposium (IRPS)

Journal publisher: IEEE

Published year: 2021

Published pages: 1-6

DOI identifier: 10.1109/irps46558.2021.9405116

ISBN: 978-1-7281-6893-7