Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy

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Authors: T. Nuytten, J. Bogdanowicz, L. Witters, G. Eneman, T. Hantschel, A. Schulze, P. Favia, H. Bender, I. De Wolf, W. Vandervorst

Journal title: APL Materials

Journal number: 6/5

Journal publisher: APL Materials

Published year: 2018

Published pages: 058501

DOI identifier: 10.1063/1.4999277

ISSN: 2166-532X