Influence of dual Ge/C pre-amorphization implantation on the Ni1−Pt Si phase nucleation and growth mechanisms

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Authors: S. Guillemin, P. Gergaud, N. Bernier, L. Lachal, F. Mazen, A. Jannaud, F. Nemouchi, Ph. Rodriguez

Journal title: Microelectronic Engineering

Journal number: 244-246

Journal publisher: Elsevier BV

Published year: 2021

Published pages: 111571

DOI identifier: 10.1016/j.mee.2021.111571

ISSN: 0167-9317