W-Band Noise Characterization with Back-Gate Effects for Advanced 22nm FDSOI mm-Wave MOSFETs

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Authors: Q. H. Le, D. K. Huynh, D. Wang, Z. Zhao, S. Lehmann, T. Kampfe, M. Rudolph

Journal title: 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

Journal publisher: IEEE

Published year: 2020

Published pages: 131-134

DOI identifier: 10.1109/rfic49505.2020.9218369

ISBN: 978-1-7281-6809-8