Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source

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Authors: L. Becker, P. Storck, T. Schulz, M. H. Zoellner, L. Di Gaspare, F. Rovaris, A. Marzegalli, F. Montalenti, M. De Seta, G. Capellini, G. Schwalb, T. Schroeder, M. Albrecht

Journal title: Journal of Applied Physics

Journal number: Journal of Applied Physics 128, 215305 (2020)

Journal publisher: American Institute of Physics

Published year: 2020

DOI identifier: 10.1063/5.0032454

ISSN: 0021-8979