200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024
Project: PowerBase
Updated at: 29-04-2024