High-speed ultra-accurate direct C2W bonding
Project: APPLAUSE
Updated at: 31-07-2023
Resources
5627 items found
Impact of Micromachining Process on Cu-Sn Solid-Liquid Interdiffusion (SLID) Bonds
Project: APPLAUSE
Updated at: 31-07-2023
Finite Element Simulation of Solid–Liquid Interdiffusion Bonding Process: Understanding Process-Dependent Thermomechan...
Project: APPLAUSE
Updated at: 31-07-2023
Mathematical Model and Synthetic Data Generation for Infra-Red Sensors
Project: APPLAUSE
Updated at: 31-07-2023
Failure analysis of fabrication process in hermetic wafer-level packaging for microbolometer focal plane arrays
Project: APPLAUSE
Updated at: 31-07-2023
Squeeze-out and bond strength of patterned Cusingle bondSn SLID seal-frames
Project: APPLAUSE
Updated at: 31-07-2023
Vacuum Packaging of MEMS-based Infrared Detectors
Project: APPLAUSE
Updated at: 31-07-2023
Report on communications and disseminations activities
Project: APPLAUSE
Updated at: 31-07-2023
1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance
Project: UltimateGaN
Updated at: 31-07-2023
Exploration of gate trench module for vertical GaN devices
Project: UltimateGaN
Updated at: 31-07-2023
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
Project: UltimateGaN
Updated at: 31-07-2023
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
Project: UltimateGaN
Updated at: 31-07-2023
Electrical and DLTS Characterization of Gate Interfaces in GaN-based Trench-gate semi-vertical MOS devices.
Project: UltimateGaN
Updated at: 31-07-2023
Vertical GaN devices: Process and reliability
Project: UltimateGaN
Updated at: 31-07-2023
High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors
Project: UltimateGaN
Updated at: 31-07-2023
High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance
Project: UltimateGaN
Updated at: 31-07-2023
High-performance normally-off tri-gate GaN power MOSFETs
Project: UltimateGaN
Updated at: 31-07-2023
Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V
Project: UltimateGaN
Updated at: 31-07-2023
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors
Project: UltimateGaN
Updated at: 31-07-2023
Investigation of semi-vertical GaN FET structures using EBIC method
Project: UltimateGaN
Updated at: 31-07-2023
Using RESURF Technique for Edge Termination of Semi-Vertical GaN Devices
Project: UltimateGaN
Updated at: 31-07-2023
GaN-based power devices: Physics, reliability, and perspectives
Project: UltimateGaN
Updated at: 31-07-2023
Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
Project: UltimateGaN
Updated at: 31-07-2023
Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse
Project: UltimateGaN
Updated at: 31-07-2023
Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs
Project: UltimateGaN
Updated at: 31-07-2023
P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors
Project: UltimateGaN
Updated at: 31-07-2023
Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes
Project: UltimateGaN
Updated at: 31-07-2023
Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
Project: UltimateGaN
Updated at: 31-07-2023